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On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD

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Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2005) On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD. Microelectronics reliability, 45 (5-6). pp. 978-981. ISSN 0026-2714

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Official URL: http://dx.doi.org/10.1016/j.microrel.2004.11.012


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Abstract

We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model.


Item Type:Article
Additional Information:

Workshop on Dielectrics in Micoelectronics (WoDiM 2004) (13. 2004. Cork, Irlanda). © 2004 Elsevier Ltd. All rights reserved.

Uncontrolled Keywords:Films.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26019
Deposited On:09 Jul 2014 08:28
Last Modified:10 Dec 2018 14:58

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