Universidad Complutense de Madrid
E-Prints Complutense

Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching



Downloads per month over past year

Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Popa, V. and Cojocaru, A. and Tiginyanu, M. (2005) Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching. Applied Physics Letters, 86 (22). ISSN 0003-6951


Official URL: http://dx.doi.org/10.1063/1.1940734



The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150-250 nm formed near the surface of the as-grown GaN layers branch into nanowires with diameters of 20-60 nm, while islands with coral-like relief were observed at the bottom of the etched areas. CL emission of the observed nanostructures is dominated by free electron to acceptor transitions. Local CL spectra provide direct evidence of the existence of either compressive or tensile stress in different nanostructures. No free exciton luminescence was observed in GaN nanowires, supporting their relation to threading dislocations.

Item Type:Article
Additional Information:

© 2005 American Institute of Physics.
This work was supported by MCYT through Project No. MAT2003-00455 and the U.S. Civilian Research and Development Foundation under Grant No. MR2-995.

Uncontrolled Keywords:Molecular-Beam Epitaxy, Vapor-Phase-Epitaxy, Defects, Photoluminescence, Films
Subjects:Sciences > Physics > Materials
ID Code:26026
Deposited On:03 Jul 2014 18:06
Last Modified:03 Jul 2014 18:06

Origin of downloads

Repository Staff Only: item control page