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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

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Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2005) Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon. In 2005 Spanish Conference on Electron Devices, Proceedings. IEEE, pp. 49-52. ISBN 0-7803-8810-0

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Official URL: http://dx.doi.org/10.1109/SCED.2005.1504303


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Abstract

A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 degrees C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D-it, density being the lowest value measured in this work (5 - 6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits.


Item Type:Book Section
Additional Information:

Spanish Conference on Electron Devices (5. 2005. Tarragona, España). © 2005 IEEE.

Uncontrolled Keywords:V Characteristics, TiO2, Dioxide, Growth.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26036
Deposited On:09 Jul 2014 08:36
Last Modified:10 Dec 2018 14:58

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