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Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

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Prado Millán, Álvaro del and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán and Kliefoth, K. and Füssel, W. (2004) Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices. Semiconductor Science and Technology, 19 (2). pp. 133-141. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/19/2/001


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Abstract

We have studied and compared the effects of conventional annealing in a forming gas atmosphere (430 degreesC, 20 min) and rapid thermal annealing (RTA) in an inert Ar atmosphere (400-1000 degreesC, 30 s) on Al/SiOxNyHz/Si devices. The samples were deposited by the electron cyclotron resonance plasma method at low temperature (T = 200 degreesC). The devices were characterized by surface photovoltage measurements before applying contacts and by capacitance-voltage measurements. All the as-deposited samples containing N had positive flat-band voltage, which corresponds to negative charge in the insulator and/or in the interface states (Q(INS)). Additionally, trapping of positive charge is observed when measuring from inversion to accumulation after measuring from accumulation to inversion. This behaviour is tentatively attributed to the presence of defects related to N, such as the K centre (N-3=Siup arrow) or the N dangling bond (Si-2=Nup arrow), which may be present in a negatively charged state. For samples of SiO2 composition, with a negligible N content, Q(INS) is positive. High densities of interface states (D-it), above 10(12) eV(-1) cm(-2), are observed in the as-deposited samples. Both the annealing in a forming gas atmosphere and the RTA result in the change of the sign of Q(INS) from negative to positive and a decrease of its absolute value, as well as a decrease of D-it of about one order of magnitude. The trapping of positive charge is also greatly reduced. These improvements of the electrical properties are attributed to the passivation of defects by H present in the forming gas atmosphere or in the SiOxNyHz film itself in a non-bonded state. For RTA temperatures above 700 degreesC the properties of the devices degrade due to the release of H. The combination of RTA and annealing in a forming gas atmosphere results in the best properties.


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© 2004 IOP Publishing Ltd. The authors would like to thank B Steudel (Hahn-Meitner-Institut) for her inestimable help in the C–V measurements. C.A.I. de Implantación Iónica (UCM) is acknowledged for the availability of the deposition system and RTA furnace. This work has been partially financed by the CICYT (Spain) under contract no. TIC 01-1253.

Uncontrolled Keywords:Silicon-Oxynitride Films, Electron-Cyclotron-Resonance, Chemical-Vapor-Deposition, Nitride Thin-Films. Paramagnetic Point-Defects, Structural-Properties, SiOxNyHz Films, Oxide-Films, Nitrogen, Oxidation.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26092
Deposited On:10 Jul 2014 07:55
Last Modified:10 Dec 2018 14:58

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