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Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates

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Mártil de la Plaza, Ignacio y González Díaz, Germán y Prado Millán, Álvaro del y San Andres Serrano, Enrique (2004) Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates. Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers, 43 (1). pp. 66-70. ISSN 0021-4922

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URL Oficial: http://dx.doi.org/10.1143/JJAP.43.66


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Resumen

An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) has been carried out. Overall interpretation of deep-level transient spectroscopy (DLTS) and conductance transient (G-t) measurements enables us to conclude that the interface quality of Al/SiOxNy/Si MIS structures is superior to those of Al/SiNx/Si devices. Moreover,. we have proved that thermal treatments applied to Al/SiOxNy/Si capacitors induce defect passivation, possibly related to the presence of hydrogen in the films, and disorder-induced gap-state (DIGS) density maxima can decrease to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.


Tipo de documento:Artículo
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© 2004 The Japan Society of Applied Physics. The authors would like to thank C.A.I. de Implantación Iònica from Complutense University in Madrid for technical assistance with the ECR-PECVD system. This research was partially supported by the Spanish DGESIC under grant nos. TIC 1FD97-2085 and TIC 01/1253.

Palabras clave:Insulator-Semiconductor Structures, Induced Gap States, C-V Curves, Quality, Oxide, Oxynitride, Devices.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:26101
Depositado:10 Jul 2014 08:03
Última Modificación:10 Dic 2018 14:58

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