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Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2003) Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films. Japanese Journal of Applied Physics, 42 (8). pp. 4978-4981. ISSN 0021-4922

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Official URL: http://dx.doi.org/10.1143/JJAP.42.4978


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Abstract

An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) system. The presence of nitrogen in the films increases the dielectric constant value and degrades the interface quality, as our measurements demonstrate. The effect of thermal annealing has also been determined. Capacitance-voltage (C-V) results show that unannealed samples exhibit positive flat-band voltages, whereas annealed ones exhibit negative values. On the other hand, from deep-level transient spectroscopy (DLTS) measurements we can conclude that interfacial state density diminishes when thermal treatments are applied. Moreover, conductance transient analysis provides the energetic and spatial distribution of defects in the films and demonstrates that thermal improvement affects not only the interface, but also the insulator bulk.


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© 2003 The Japan Society of Applied Physics. The authors would like to thank C. A. I. de Implantación Iónica from Complutense University in Madrid for technical assistance with the ECR-PECVD system. This research was partially supported by the Spanish DGESIC under grant nos. TIC 1FD97-2085 and TIC 98/0740.

Uncontrolled Keywords:C-V Curves, Silicon Oxynitride, Quality.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26120
Deposited On:10 Jul 2014 08:25
Last Modified:10 Dec 2018 14:58

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