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Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

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Díaz-Guerra Viejo, Carlos and Vincent, J. and Piqueras de Noriega, Javier and Bermudez, V. and Diéguez, E. (2005) Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals. Journal of Applied Physics, 97 (2). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.1834727


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Abstract

The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.


Item Type:Article
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© 2005 American Institute of Physics.
This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRN-CT 2001-00199 project. Support from MCYT through Project Nos. MAT2003-00455 and MAT2003-09873-C02-01 is also acknowledged..

Uncontrolled Keywords:Auger Recombination, Bulk Gasb. Photoluminescence, Defects, Physics, Cells, Gaas Auger Recombination, Bulk Gasb. Photoluminescence, Defects, Physics, Cells, Gaas Auger Recombination, Bulk Gasb. Photoluminescence, Defects, Physics, Cells, Gaas Auger Recombination, Bulk Gasb. Photoluminescence, Defects, Physics, Cells, Gaas
Subjects:Sciences > Physics > Materials
ID Code:26123
Deposited On:07 Jul 2014 18:24
Last Modified:22 Jul 2014 08:20

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