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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

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Mártil de la Plaza, Ignacio y González Díaz, Germán y Prado Millán, Álvaro del y San Andres Serrano, Enrique (2003) Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films. Journal of Materials Science: Materials in Electronics, 14 (5-7). pp. 287-290. ISSN 0957-4522

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URL Oficial: http://dx.doi.org/10.1023/A:1023907508286


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Resumen

In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor deposition method. C-V results show that samples without SiO2 have more defects than those with SiO2. Deep-level transient spectroscopy and conductance transient measurements demonstrate that as for the samples containing the SiO2 film, these defects are mostly concentrated in the insulator/semiconductor interface, whereas in the other case defects are spatially distributed into the insulator.


Tipo de documento:Artículo
Información Adicional:

International Conference on Materials for Microelectronics and Nanoengineering (4. 2002. Espoo, Finlandia). © 2003 Kluwer Academic Publishers. The authors would like to thank C. A. I. de Impalntación Iónica from the Complutense University in Madrid for technical assitance with the ECR-CVD system. This research was partially supported by the Spanish DGESIC under Grants No. TIC 1FD79-2085 and TIC 98/0740.

Palabras clave:Insulator-Semiconductor Structures, Conductance Transient Techniques, C-V, Al/SiNx, Plasma, H/InP, Deposition, Quality, DLTS.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:26141
Depositado:11 Jul 2014 07:12
Última Modificación:11 Jul 2014 07:12

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