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Study of defects in In_xGa_(1-x)Sb bulk crystals

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Díaz-Guerra Viejo, Carlos and Chioncel, M. F. and Vincent, J and Bermudez, V. and Piqueras de Noriega, Javier and Diéguez, E. (2005) Study of defects in In_xGa_(1-x)Sb bulk crystals. Physica Status Solidi C, 2 (6). pp. 1897-1901. ISSN 1610-1634

Official URL: http://dx.doi.org/10.1002/pssc.200460522


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Abstract

The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 degrees C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.


Item Type:Article
Additional Information:

© Wiley-V C H Verlag GmbH.
International Conference on Extended Defects in Semiconductors (10. 2004. Chernogolovka, Rusia).

Uncontrolled Keywords:Liquid-Phase Epitaxy, Sb-Rich Solutions, High-Quality Gasb, Gallium Antimonide, Photoluminescence, Growth, Insb
Subjects:Sciences > Physics > Materials
ID Code:26150
Deposited On:07 Jul 2014 18:33
Last Modified:07 Jul 2014 18:33

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