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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide. Journal of Materials Science: Materials in Electronics, 14 (5-7). pp. 375-378. ISSN 0957-4522

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Official URL: http://dx.doi.org/10.1023/A:1023952718281


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Abstract

In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by Xray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication.


Item Type:Article
Additional Information:

International Conference on Materials for Microelectronics and Nanoengineering (4. 2002. Espoo, Finlandia). © 2003 Kluwer Academic Publishers.

Uncontrolled Keywords:Thin-Films, Fabrication.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26170
Deposited On:11 Jul 2014 07:15
Last Modified:10 Dec 2018 14:58

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