Publication: Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
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2002-11-20
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World Scientific Publ. Co. Pte.Ltd.
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We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy.
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IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002) (8. 2002. Xian-Peoples, China). © World Scientific Publishing Company. This work was partially by DGICYT grant PB97-1254 and by CICYT grant TIC-98/0740. One of us (S.H.) acknowledges support from Departament d'Universitats i Recerca de la Generalitat de Catalunya.
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1) S. Koumetx, J. Marcon, K. Ketata, C. Dubon-Chevalier, P.Launay, J.L. Benchimol, Appl. Phys. Lett., 67, 2161-2163 (1995).
2) R. Berserman, C. Hirlimann, M. Balkanski, J. Chevallier, Solid State Commun., 20, 485-487 (1976).
3) L. Artús, R. Cuscó, J. Ibáñez, N. Blanco, G. González-Díaz, Phys. Rev. B., 60, 5456-5463 (1999).
4) B. Jusserand, S. Slempkes, Solid State Commun., 49, 95-98 (1984).
5) J.P. Estrera, P.D. Stevens, R. Glosser, W.M. Duncan, Y.C. Kao, H.Y. Liu, E.A. Beam III, Appl. Phys. Lett., 61, 1927-1929 (1992).
6) R. Cuscó, G. Talamás, L. Artús, J.M. Martín, G. González-Díaz, J. Appl. Phys., 79, 3927-3929 (1996).
7) A. Pinczuk, J.M. Worlock, R.E. Nahory, M.A. Pollack, Appl. Phys. Lett., 33, 461-463 (1978).