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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments

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Mártil de la Plaza, Ignacio and González Díaz, Germán (2002) Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments. International Journal of Modern Physics B, 16 (28-29). pp. 4401-4404. ISSN 0217-9792

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Official URL: http://dx.doi.org/10.1142/S0217979202015492


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Abstract

We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy.


Item Type:Article
Additional Information:

IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002) (8. 2002. Xian-Peoples, China). © World Scientific Publishing Company. This work was partially by DGICYT grant PB97-1254 and by CICYT grant TIC-98/0740. One of us (S.H.) acknowledges support from Departament d'Universitats i Recerca de la Generalitat de Catalunya.

Uncontrolled Keywords:Scattering, In(1-x)GaxAsyP(1-y), InP.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26171
Deposited On:11 Jul 2014 07:41
Last Modified:10 Dec 2018 14:58

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