Universidad Complutense de Madrid
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Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers

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Díaz-Guerra Viejo, Carlos y Piqueras de Noriega, Javier (2004) Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers. European Physical Journal-Applied Physics, 27 (1-mar). pp. 227-230. ISSN 1286-0042

URL Oficial: http://dx.doi.org/10.1051/epjap:2004091


URLTipo de URL
http://www.epjap.orgEditorial


Resumen

Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the nature and spatial distribution of defects and impurities in n-type epitaxial 4H-SiC. CL microscopy reveals the existence of 6H-SiC polytype inclusions, while CL spectra recorded at different excitation conditions show luminescence emission related to deep levels in the SiC epilayer. Deconvolution of the mentioned spectra indicates the complex character of the deep-level CL emission, that is actually composed of four bands centred near 2.72, 2.56, 2.42 and 2.00 eV at 88 K. The origin of these bands is discussed considering previous deep level transient spectroscopy measurements carried out in the same material investigated in the present work.


Tipo de documento:Artículo
Información Adicional:

© E D P Sciences.
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (10. 2003. Batz sur Mer, Francia).

Palabras clave:Silicon-Carbide, Epitaxial-Growth, Schottky Diodes,Defects, Crystals, Centers
Materias:Ciencias > Física > Física de materiales
Código ID:26187
Depositado:08 Jul 2014 15:47
Última Modificación:08 Jul 2014 15:47

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