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Nanoscopic study of ZnO films by electron beam induced current in the scanning tunneling microscope

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Urbieta, A. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Vasco, E. and Zaldo, C. (2004) Nanoscopic study of ZnO films by electron beam induced current in the scanning tunneling microscope. Journal of Optoelectronics and advanced materials, 6 (1). pp. 183-188. ISSN 1454-4164



Abstract

Scanning tunnelling microscopy and spectroscopy have been used to characterize electrically active grain boundaries in pulsed laser deposited ZnO films with grain sizes in the range 216-500 nm. The p-type behaviour at the boundary is evidenced by local STM conductance spectra, which reveal boundaries with a n-p-i-p-n structure. in addition, local differential conductance measurements show higher surface band gap at the grain boundaries than in the grain interior, which is related to the space charge at the boundaries. The beam induced current mode of the STM has been used to image electrically active grain boundaries with a resolution of few nanometers in the different films. It is demonstrated that in some of the small grains the space charge region extends to the whole grain area so that no electrical barrier can be related to the grain boundary.


Item Type:Article
Additional Information:

© Natl Inst Optoelectronics.
This work has been supported by MCYT (Project MAT2000-2119) and by CAM (project 07N/0004/2001)

Uncontrolled Keywords:Zinc-Oxide, Grain-Boundaries, Spectroscopy, Ceramics
Subjects:Sciences > Physics > Materials
ID Code:26213
Deposited On:08 Jul 2014 16:00
Last Modified:08 Jul 2014 16:00

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