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Luminescence from indented Te-doped GaSb crystals

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Chioncel, M. F. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2004) Luminescence from indented Te-doped GaSb crystals. Semiconductor Science and Technology, 19 (3). pp. 490-493. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/19/3/036


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Abstract

Cathodoluminescence in the scanning electron microscope has been used to investigate the effect of plastic deformation, produced by indentation, in Te-doped GaSb crystals. Deformation has been found to cause a strong quenching of the luminescence emission as well as spectral changes. In particular, the decrease of the near band edge emission is accompanied by the relative increase of the defect band A and of the 730 meV band related to the VGaGaSbTesb centres. Annealing treatments up to 600 degreesC lead to partial recovery of the deformation induced defects, and reveal the existence of Te out-diffusion processes from the deformed areas.


Item Type:Article
Additional Information:

© 2004 IOP Publishing Ltd Printed in the UK.
This work was supported by MCYT through project MAT2000-2119.

Uncontrolled Keywords:Liquid-Phase Epitaxy, Sb-Rich Solutions, High-Quality Gasb, N-Type Gasb, P-Gasb, Cathodoluminescence, Photoluminescence, Dislocations, Defects, Centers
Subjects:Sciences > Physics > Materials
ID Code:26216
Deposited On:08 Jul 2014 16:43
Last Modified:12 May 2016 16:57

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