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Defect assessment of Mg-doped GaN by beam injection techniques

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Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Castaldini, A. and Cavallini, A. and Polent, L. (2003) Defect assessment of Mg-doped GaN by beam injection techniques. Journal of Applied Physics, 94 (12). pp. 7470-7475. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.1628832


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Abstract

The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous recombination activity in the investigated material. Deep levels giving rise to level-to-band transitions were detected by PC spectroscopy. A large PC quenching observed upon illumination with light of (2.65-2.85) eV is tentatively attributed to metastable traps within the band gap. CL spectra reveal the existence of emission bands centered at 85 K at 3.29, 3.20, 3.15, and 3.01 eV, respectively. Both time-resolved and steady-state CL measurements carried out under different excitation conditions indicate that the 3.15 and 3.01 eV emissions are likely related to donor-acceptor pair transitions. TRCL measurements also reveal different recombination kinetics for these bands and suggest that deep donors are involved in the mechanism responsible for the 3.01 eV emission.


Item Type:Article
Additional Information:

© 2003 American Institute of Physics.
The authors wish to thank D. C. Look, H. Morkoc¸, and J. van Nostrand for providing the investigated material. This work has been partially supported by MCYT through Project No. MAT2000-2119.

Uncontrolled Keywords:Chemical-Vapor-Deposition, P-Type Gan, Photoluminescence Bands, Yellow Luminescence, Cathodoluminescence, Films, Photoconductivity, Spectroscopy, Irradiation, Vacancies
Subjects:Sciences > Physics > Materials
ID Code:26240
Deposited On:15 Jul 2014 11:15
Last Modified:15 Jul 2014 11:15

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