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Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

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Mártil de la Plaza, Ignacio and González Díaz, Germán (2001) Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques. Japanese Journal of Applied Physics, Part. 1: Regular Papers Short Notes & Review Papers, 40 (7). pp. 4479-4484. ISSN 0021-4922

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Official URL: http://dx.doi.org/10.1143/JJAP.40.4479


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Abstract

We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfaces. The devices are characterized by means of capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and conductance transient analyses. Our results show that a simple cleaning step of the semiconductor surface prior to insulator deposition, and a post deposition RTA process are sufficient to obtain good-quality structures, the n-type being better than the p-type. In both cases, we conclude that a dielectric composition of x = 1.50 seems to be the best choice, and that the most adequate RTA temperature is between 500 degreesC and 600 degreesC.


Item Type:Article
Additional Information:

© 2001 The Japan Society of Applied Physics. The authors would like to thank C. A. I. de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish DGESIC under Grant Nos. TIC 1FD97-2085 and TIC 98/0740.

Uncontrolled Keywords:Insulator-Semiconductor Structures, Annealed Al/SiNx, Interface States, H/InP, Quality, Devices, Fabrication.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26252
Deposited On:14 Jul 2014 08:22
Last Modified:10 Dec 2018 14:58

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