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Characterization of thin layers of n- and p-type GaN

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Castaldini, A. and Cavallini, A. and Polenta, L. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2002) Characterization of thin layers of n- and p-type GaN. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 91 . pp. 308-312. ISSN 0921-5107

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Official URL: http://dx.doi.org/10.1016/S0921-5107(01)01051-0


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Abstract

Technological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitride, thickness is a key parameter controlling the density and distribution of defects, especially extended ones. In this work highly defective thin GaN layers, both p- and n-type, have been characterized by photocurrent (PC) and time-resolved cathodoluminescence (TRCL) spectroscopy in order to evidence the presence of defect-related bands influencing the electrical and optical activity of the material. Scanning microscopy-based techniques, namely electron beam induced current (EBIC), CL imaging and optical beam induced current (OBIC) have been applied to investigate the recombination activity and the spatial distribution of the extended defects.


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Additional Information:

© 2002 Elsevier Science B.V. All rights reserved.
International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX) (9. 2001. Rimini, Italia).
The authors wish to thank David C. Look, Hadis Morkoc and Joseph Van Nostrand for providing the samples. C. Díaz-Guerra acknowledges M.E.C.D. for a post-doctoral research grant.

Uncontrolled Keywords:Molecular-Beam Epitaxy, Doped Gan, Photoluminescence, Films, Luminescence, Mg, Cathodoluminescence, Spectroscopy, Emission
Subjects:Sciences > Physics > Materials
ID Code:26283
Deposited On:16 Jul 2014 10:30
Last Modified:12 May 2016 18:09

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