Universidad Complutense de Madrid
E-Prints Complutense

Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures

Impacto

Descargas

Último año

Mártil de la Plaza, Ignacio y González Díaz, Germán (2000) Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures. Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers, 39 (11). pp. 6212-6215. ISSN 0021-4922

[img] PDF
Restringido a Sólo personal autorizado del repositorio hasta 31 Diciembre 2020.

141kB

URL Oficial: http://dx.doi.org/10.1143/JJAP.39.6212


URLTipo de URL
http://iopscience.iop.orgEditorial


Resumen

The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface state density, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. As for the dielectric composition, both the x = 0.97 and x = 1.43 values provide interfacial state density and DIGS damage values of the same order of magnitude. In the x = 0.97 case, RTA treatments reduce the insulator damage moving it towards the interface. In the x = 1.43 case this behavior is only observed for RTA temperatures lower than 500 degreesC. So, moderate temperature (<500<degrees>C) RTA treatments improve DIGS damage. This is an important result in terms of fabricating bi-layered metal-insulator-semiconductor (MIS) structures that not only have good-quality interfaces, but also good dielectric properties.


Tipo de documento:Artículo
Información Adicional:

© 2000 The Japan Society of Applied Physics. The authors would like to thank C. A. I. de Implantación Iónica of the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish DGESIC under grant ns. TIC 1FD97-2085 and TIC 98/0740.

Palabras clave:Interface, Devices, Fabrication, Model.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:26294
Depositado:15 Jul 2014 07:44
Última Modificación:15 Jul 2014 07:44

Descargas en el último año

Sólo personal del repositorio: página de control del artículo