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Study of growth hillocks in GaN : Si films by electron beam induced current imaging

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Zaldivar, M.H. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (2001) Study of growth hillocks in GaN : Si films by electron beam induced current imaging. Journal of Applied Physics, 90 (2). pp. 1058-1060. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.1379773


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Abstract

Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.


Item Type:Article
Additional Information:

© 2001 American Institute of Physics.
This work was supported by MCYT-DGI (Project No. MAT2000-2119). M.H.Z. thanks AECI and CoNaCyT for a research grant.

Uncontrolled Keywords:Grain-Boundaries
Subjects:Sciences > Physics > Materials
ID Code:26298
Deposited On:16 Jul 2014 10:53
Last Modified:16 Jul 2014 10:53

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