Publication:
Study of growth hillocks in GaN : Si films by electron beam induced current imaging

Loading...
Thumbnail Image
Full text at PDC
Publication Date
2001-07-15
Authors
Zaldivar, M.H.
Piqueras de Noriega, Javier
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Citations
Google Scholar
Research Projects
Organizational Units
Journal Issue
Abstract
Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.
Description
© 2001 American Institute of Physics. This work was supported by MCYT-DGI (Project No. MAT2000-2119). M.H.Z. thanks AECI and CoNaCyT for a research grant.
Unesco subjects
Keywords
Citation
1. P. G. Middleton, C. Trager-Cowan, A. Mohammed, K. P. O’Donnell, W. Van Der Stricht, I. Moerman, and P. Demeester, Mater. Res. Soc. Symp. Proc. 449, 417 (1997). 2. M. Herrera Zaldivar, P. Ferna´ndez, and J. Piqueras, J. Appl. Phys. 83, 462 (1998). 3. D. B. Holt, in SEM Microcharacterization of Semiconductors, edited by D. B. Holt and D. C. Joy (Academic, New York, 1989), pp. 241–338. 4. L. O. Bubulac and W. E. Tennant, Appl. Phys. Lett. 52, 1255 (1988). 5. G. Panin and E. Yakimov, Semicond. Sci. Technol. 7, A150 (1992). 6. D. B. Holt, B. Raza, and A. Wojcik, Mater. Sci. Eng., B 42, 14 (1996). 7. C. Díaz-Guerra and J. Piqueras, Appl. Phys. Lett. 71, 2830 (1997). 8. A. Cremades and J. Piqueras, J. Appl. Phys. 85, 1438 (1999). 9. E. Ziegler, W. Siegel, H. Blumtritt, and O. Breitenstein, Phys. Status Solidi B 72, 593 (1982). 10. G. J. Russell, M. J. Robertson, B. Vincent, and J. Woods, J. Mater. Sci. 15, 939 (1980). 11. G. N. Panin and E. B. Yakimov, Inst. Phys. Conf. Ser. 117, 763 (1991). 12. F. A. Ponce, J. W. Steeds, C. D. Dyer, and G. D. Pitt, Appl. Phys. Lett. 69, 2650 (1996).
Collections