Publication: Cathodoluminescence characterization of InGaSb crystals
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Publication Date
2004
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Chioncel, M.F.
Piqueras de Noriega, Javier
Vincent López, José Luis
Bermudez, V.
Dieguez, E.
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IEEE
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Abstract
The nature and the spatial distribution of radiative defects in In(X)Ga(1-x)Sb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray microanalysis and backscattered electron imaging to relate the local luminescence properties to the chemical composition. Measurements of the band gap energy from the CL spectra, supported by X-ray compositional mappings, reveal an effective incorporation of In in the matrix, leading to the fori-nation of the ternary alloy in the whole volume of the ingot. A band often observed in the CL spectra, peaked at about 20 meV below the band gap energy, is attributed to the presence in the ternary alloy of an acceptor level that would correspond to the V(Ga)-Ga(Sb) acceptor in GaSb.
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©(2004) IEEE.
International Conference on Microelectronics (MIEL 2004).(24. 2004. Nis, Serbia).
This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRN-CT 2001-00199 project. M.F.C. acknowledges European Commission for financial support. Support from MCYT through project MAT2000-2119 is also
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