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Scanning electron microscopy characterization of ZnSe single crystals grown by solid-phase recrystallization

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Urbieta, A. y Piqueras de Noriega, Javier y Muñoz, V. (2000) Scanning electron microscopy characterization of ZnSe single crystals grown by solid-phase recrystallization. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 78 (2-mar). pp. 105-108. ISSN 0921-5107

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URL Oficial: http://dx.doi.org/10.1016/S0921-5107(00)00523-7


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ZnSe single crystals were grown from n-type microcrystalline boules by a Solid Phase Recrystallization (SPR) method. The recrystallizations were performed under different atmospheres, Ar or Se, and pressures to investigate the influence of growth conditions on the structural features of the resulting crystals. The samples were mechanically and mechano-chemically polished in a bromine methanol solution and, then, etched in HCl for a short time, before characterization. The homogeneity and the nature of defects in the crystals were studied by Cathodoluminescence (CL) in the scanning electron microscope (SEM). CL measurements show the existence of slip bands in the recrystallized samples, likewise CL spectra show that on these samples the dislocation related Y band is enhanced and the emission bands appearing in the 2.0-2.5 eV region depend on the annealing conditions. In addition during SPR, twinned regions appear with different electronic recombination properties.


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© 2000 Elsevier Science S.A.
This work was supported by CICYT (grants MAT98-0975-C02-01, 1FD970086 and MAT98-1306E) and DGES (grant PB96-0639).

Palabras clave:Semiconductors
Materias:Ciencias > Física > Física de materiales
Código ID:26333
Depositado:21 Jul 2014 08:21
Última Modificación:09 Jun 2016 15:25

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