Publication:
Scanning electron microscopy characterization of ZnSe single crystals grown by solid-phase recrystallization

Loading...
Thumbnail Image
Full text at PDC
Publication Date
2000-12-15
Authors
Piqueras de Noriega, Javier
Muñoz, V.
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier Science Sa
Citations
Google Scholar
Research Projects
Organizational Units
Journal Issue
Abstract
ZnSe single crystals were grown from n-type microcrystalline boules by a Solid Phase Recrystallization (SPR) method. The recrystallizations were performed under different atmospheres, Ar or Se, and pressures to investigate the influence of growth conditions on the structural features of the resulting crystals. The samples were mechanically and mechano-chemically polished in a bromine methanol solution and, then, etched in HCl for a short time, before characterization. The homogeneity and the nature of defects in the crystals were studied by Cathodoluminescence (CL) in the scanning electron microscope (SEM). CL measurements show the existence of slip bands in the recrystallized samples, likewise CL spectra show that on these samples the dislocation related Y band is enhanced and the emission bands appearing in the 2.0-2.5 eV region depend on the annealing conditions. In addition during SPR, twinned regions appear with different electronic recombination properties.
Description
© 2000 Elsevier Science S.A. This work was supported by CICYT (grants MAT98-0975-C02-01, 1FD970086 and MAT98-1306E) and DGES (grant PB96-0639).
Unesco subjects
Keywords
Citation
[1] G. Cantwell, W.C. Harsch, H.L. Cotal, B.G. Markey, S.W.S.Mc. Keever, J.E. Thomas, J. Appl. Phys. 71 (1992) 2931. [2] R. Triboulet, J.O. Ndap, A. Tromson-Carli, P. Lemason, C. Morhan, G. Neu, J. Crystal Growth 159 (1996) 156. [3] E. Tournie´, C. Morhain, G. Neu, M. Laugt, C. Ongaretto, J.P. Faurie, R. Triboulet, J.O. Ndap, J. Appl. Phys. 80 (5) (1996) 1983. [4] S. Fusil, P. Lemasson, J.O. Ndap, A. Rivière, A. Lusson, G. Neu, E. Tournie´, G. Geoffroy, A. Zozime, R. Triboulet, J. Crystal Growth 184:185 (1998) 1021. [5] E. Rzepka, J.P. Roger, P. Lemasson, R. Triboulet, J. Crystal Growth 197 (1999) 480. [6] P. Lemason, J.O. Ndap, S. Fusil, A. Riviere, B. Qu’hen, A. Lusson, G. Neu, E. Toumie, G. Geoffroy, A. Zozime, R. Triboulet, Mat. Letters 36 (1998) 257. [7] F. Domı´nguez-Adame, J. Piqueras, P. Ferna´ndez, Appl. Phys. Lett. 58 (1991) 257. [8] S. Myhajlenko, J.L. Batstone, H.J. Hutchinson, J.W. Steeds, J. Phys. C 17 (1984) 6477. [9] Y.G. Shreter, Y.T. Rebane, O.V. Klyavin, P.S. Aplin, C.J. Axon, W.T. Young, J.W. Steeds, J. Crystal Growth 159 (1996) 883. [10] M. Karai, K. Kido, H. Naito, K. Kurosawa, M. Okuda, T. Fujino, M. Kitagawa, J. Appl. Phys. 69 (1) (1991) 291. [11] K. Yoneda, Y. Hishida, H. Ishii, Appl. Phys. Lett. 47 (7) (1985) 702. [12] D. Verity, F.J. Bryant, J.J. Davies, J.E. Nicholls, C.G. Scott, D. Shaw, J. Phys. C 15 (1982) 5497. [13] G.B. Stringfellow, R.H. Bube, Phys. Rev. 171 (3) (1968) 903. [14] M. Godlewski, W.E. Lamb, B.C. Cavenett, Solid State Com. 39 (1981) 595. [15] H.G. Grimmeis, C. Ovre´n, W. Ludwig, R. Mach, J. Appl. Phys. 48 (12) (1977) 5122. [16] R.N. Bhargava, J. Crystal Growth 59 (1982) 15. [17] A.E. Thomas, G.J. Russel, J. Woods, J. Phys. C 17 (1984) 6219. [18] D.J. Dunstan, J.E. Nicholls, B.C. Cavenett, J.J. Davies, J. Phys. C 13 (1980) 6409. [19] J.W. Allen, Semicond. Sci. and Techn. 10 (1995) 1049. [20] P. Ferna´ndez, J. Piqueras, A. Urbieta, Y.T. Rebane, Y. Shreter, Semicon. Sci. and Techn. 14 (1) (1999) 430.
Collections