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Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix



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Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Golubev, VG. and Kurdyukov, D.A. and Pevtsov, A. B. and Zamoryanskaya, M. V. (2002) Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix. Applied Physics Letters, 77 (20). pp. 3194-3196. ISSN 0003-6951


Official URL: http://dx.doi.org/10.1063/1.1325387



Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to investigate the local electronic behavior of Pt-Si nanostructures fabricated in an opal matrix formed by silica spheres of 250 nm diameter. Si and Pt are regularly distributed inside the opal pores and form nanoscale metal-semiconductor-metal junctions. Normalized differential conductance curves enable us to study the distribution of Pt and Si and to detect the presence of regions showing a surface band gap in the range 0.5-0.8 eV, possibly associated with the formation of silicides. STS appears as a suitable technique for the electrical characterization of opal-based nanostructures.

Item Type:Article
Additional Information:

© 2000 American Institute of Physics.
This work was supported by DGES (Project No. PB96-0639), the Russian R&D program ‘‘Nanostructures’’ (Grant No. 97-2016) and RFBR under Grant No. 98-02-17350.

Uncontrolled Keywords:Electronic-Structure, Si(111)2x1 Surface, Microscopy
Subjects:Sciences > Physics > Materials
ID Code:26341
Deposited On:21 Jul 2014 08:13
Last Modified:21 Jul 2014 08:13

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