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Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

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Herrera Zaldiva, M. y Fernández Sánchez, Paloma y Piqueras de Noriega, Javier y Sukhoveyev, W. y Ivantsov, V. A. y Shreter, Y. G. (2000) Origin of yellow luminescence from reduced pressure grown bulk GaN crystals. Applied Physics A-Materials Science&Processing, 71 (1). pp. 55-58. ISSN 0947-8396

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URL Oficial: http://link.springer.com/article/10.1007/PL00021091


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Resumen

Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq.


Tipo de documento:Artículo
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© Springer-Verlag 2000.
This work has been supported by DGES (Project PB96-0639). The Russian Fund for Basic Research (Project 98-01-01084) is acknowledged.

Palabras clave:Light-Emitting-Diodes, Cathodoluminescence, Films
Materias:Ciencias > Física > Física de materiales
Código ID:26358
Depositado:25 Jul 2014 12:06
Última Modificación:09 Jun 2016 15:27

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