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Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

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Herrera Zaldiva, M. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Sukhoveyev, W. and Ivantsov, V. A. and Shreter, Y. G. (2000) Origin of yellow luminescence from reduced pressure grown bulk GaN crystals. Applied Physics A-Materials Science&Processing, 71 (1). pp. 55-58. ISSN 0947-8396

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Official URL: http://link.springer.com/article/10.1007/PL00021091


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Abstract

Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq.


Item Type:Article
Additional Information:

© Springer-Verlag 2000.
This work has been supported by DGES (Project PB96-0639). The Russian Fund for Basic Research (Project 98-01-01084) is acknowledged.

Uncontrolled Keywords:Light-Emitting-Diodes, Cathodoluminescence, Films
Subjects:Sciences > Physics > Materials
ID Code:26358
Deposited On:25 Jul 2014 12:06
Last Modified:09 Jun 2016 15:27

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