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Deformation-induced defect levels in ZeSe crystals

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Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Urbieta Quiroga, Ana Irene and Rebane, Y. T. and Shrete, Y. (1999) Deformation-induced defect levels in ZeSe crystals. Semiconductor Science and Technology, 14 (5). pp. 430-434. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/14/5/010


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Abstract

The influence of defects, in particular the deformation-induced defects, on the luminescence of bulk ZnSe single crystals has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Deformation has been found to cause a reduction of the total CL intensity of the sample. CL images of deformed samples reveal dark slip bands. The CL spectrum of an undeformed crystal shows the near-band-edge emission at 2.8 eV and a broad band peaked at 2.2 eV with a shoulder at about 2 eV. Deformation at low strain causes only slight spectral changes while in a heavily deformed crystal a strong relative enhancement of the deep level band in the range 2-2.2 eV is observed. The relation of these spectral changes to the deformation-induced defects is discussed. The infrared spectra show the existence of broad bands at 0.95 and 1.27 eV. However, these emissions were found to be rather insensitive to deformation.


Item Type:Article
Additional Information:

© 1999 IOP Publishing Ltd.
This work has been supported by DGES (Project PB96-0639). The Russian Fund for Fundamental Studies (Projects 98-01-01084 and 96-01-196825) is also acknowledged.

Uncontrolled Keywords:Cathodoluminescence, Znse
Subjects:Sciences > Physics > Materials
ID Code:26362
Deposited On:25 Jul 2014 12:44
Last Modified:09 Jun 2016 15:28

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