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Influence of deformation on the luminescence of GaN epitaxial films

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Zaldivar, M.H. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1998) Influence of deformation on the luminescence of GaN epitaxial films. Semiconductor Science and Technology, 13 (8). pp. 900-905. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/13/8/013


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Abstract

The effect of indentation on the cathodoluminescence (CL) of GaN:Si epitaxial films has been investigated in the scanning electron microscope. Deformation produces changes in the defect structure which are monitored through the changes induced in the cathodoluminescent emission. Besides a general quenching of the luminescence, an increase of the relative intensity of the deep level bands is observed. The effect of different annealing treatments on the CL emission has been investigated.


Item Type:Article
Additional Information:

© 1998 IOP Publishing Ltd.
This work was supported by DGICYT (project PB96-0639). MHZ thanks AECI and CoNaCyT for a research grant. The help of Dr J M G´omez de Salazar on mechanical treatments is also acknowledged.

Uncontrolled Keywords:Light-Emitting-Diodes, Cathodoluminescence
Subjects:Sciences > Physics > Materials
ID Code:26370
Deposited On:29 Jul 2014 08:26
Last Modified:09 Jun 2016 15:29

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