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Characterization of charged defects in Cd_xHg_(1-x)Te and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy

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Panin, G. N. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (1998) Characterization of charged defects in Cd_xHg_(1-x)Te and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy. Applied physics Letters, 72 (17). pp. 2139-2131. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.121298


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Abstract

A correlative study of the electrically active defects of CdxHg1-xTe and CdTe crystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined system. Charged structural and compositional defects were revealed by the remote electron beam induced current (REBIC) mode of the scanning electron microscope. The electronic inhomogeneities of the samples were analyzed with nm resolution by current imaging tunneling spectroscopy (CITS) measurements, which showed the existence of built-in electrostatic barriers as well as local variations of the surface band gap in the defect areas imaged by REBIC.


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© 1998 American Institute of Physics.
This work was supported by DGICYT (Project PB93-1256) and by CICYT (Project IN93-0012). The help of Professor A. M. Baro´, Dr. A. Asenjo, and Dr. J. Gómez-Herrero is greatfully acknowledged. G. Panin thanks Spanish MEC for a research grant.

Uncontrolled Keywords:Si(111)2x1 Surface, Microscopy, Cathodoluminescence, Cdte(001)
Subjects:Sciences > Physics > Materials
ID Code:26373
Deposited On:29 Jul 2014 08:33
Last Modified:08 Feb 2018 16:40

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