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Cathodoluminescence microscopy and photoluminescence of defects in ZnTe

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Fernández Sánchez, Paloma and García, J. A. and Remon, A and Piqueras de Noriega, Javier and Muñoz, V. and Triboulet, R. (1998) Cathodoluminescence microscopy and photoluminescence of defects in ZnTe. Semiconductor Science and Technology, 13 (4). pp. 410-416. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/13/4/010


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Abstract

ZnTe single crystals grown by the cold travelling heater method have been investigated by means of photo-and cathodoluminescence. The spectral region covered in this work ranges from 2.48 eV (500 nm) which corresponds to band-edge emission to 0.62 eV (2000 nm). Visible and infrared cathodoluminescence images have been recorded, and the influence of extended defects on the observed luminescence has been studied.


Item Type:Article
Additional Information:

1998 IOP Publishing Ltd.
This work has been partially supported by the Spanish projects DGICYT PB-93-1256, GV-2205/94 and the Spanish–French collaboration HF-95-299B.

Uncontrolled Keywords:II-VI Compounds, Growth, Purity, Vapor, Cdte
Subjects:Sciences > Physics > Materials
ID Code:26376
Deposited On:29 Jul 2014 08:36
Last Modified:09 Jun 2016 15:30

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