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Cathodoluminescence microscopy and photoluminescence of defects in ZnTe

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1998-04
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Iop Publishing Ltd
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ZnTe single crystals grown by the cold travelling heater method have been investigated by means of photo-and cathodoluminescence. The spectral region covered in this work ranges from 2.48 eV (500 nm) which corresponds to band-edge emission to 0.62 eV (2000 nm). Visible and infrared cathodoluminescence images have been recorded, and the influence of extended defects on the observed luminescence has been studied.
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1998 IOP Publishing Ltd. This work has been partially supported by the Spanish projects DGICYT PB-93-1256, GV-2205/94 and the Spanish–French collaboration HF-95-299B.
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[1] Nurmikko A V and Gunshor R L 1994 Solid State Commun. 92 (1–2) 113 [2] Morkoc¸ H, Strite S, Gao G B, Li M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 (3) 1363 [3] Edmond J, Kong H and Dmitriev V 1994 Silicon Carbide and Related Materials (Inst. Phys. Conf. Ser. 137) ed Spencer (Bristol: Institute of Physics) p 515 [4] Pankove J Y, Miller E A and Berkeyheiser J E 1971 RCA Rev. 32 283 [5] Nakamura S 1997 MRS Bull. (February) 22 29 [6] Ponce F and Bour D P 1997 Nature 386 351 [7] Marfaing Y 1996 J. Crystal Growth 161 (1–4) 205 [8] Pautrat J L, Magnea N and Faurie J P 1982 J. Appl. Phys. 53 (12) 8668 [9] Triboulet R, Phan Van K and Didier G 1990 J. Crystal Growth 101 216 [10] Domínguez-Adame F, Piqueras J and Fernández P 1991 Appl. Phys. Lett. 58 257 [11] Schmidt T, Lischka K and Zulehner W 1992 Phys. Rev. B 45 8989 [12] Biao Y, Azoulay M, George M A, Burger A, Collins W E, Silberman E, Su C H, Volz M E, Szofran F R and Gillies D C 1994 J. Crystal Growth 138 219 [13] Dean P J, Venhaus H, Pfister J C, Shaub B and Marine J 1979 J. Lumin. 16 363 [14] Magnea N, Molva E, Bensahel D and Romestain R 1980 Phys. Rev. B 22 (6) 2983 [15] Triboulet R, Aoudia A and Lusson A 1995 J. Electron. Mater. 24 1061 [16] Kuhn W S et al 1995 Prog. Cryst. Growth Charact. Mater. 31 119 [17] Venghaus H and Dean P J 1980 Phys. Rev. B 21 1596 [18] Wolf K, Naumov A N, Reisinger T, Kastner M, Stanzl H P, Kuhn W and Gebhardt W 1994 J. Crystal Growth 135 113 [19] Trager-Cowan C, Burley A, O´Donnell K P, Naumov A, Wolf K, Stanzl H P, Wagner H P and Gebhardt W 1993 Microsc. Semicond. Mater. 134 683 [20] Burki Y, Czaja W, Capozzi V and Schwendimann P 1994 J. Lumin. 58 206 [21] Burki Y, Czaja W, Capozzi V and Schwendimann P 1994 J. Lumin. 60–61 4 [22] Lisovoi B V and Ponomarenko I I 1994 Tech. Phys. 39 (8) 852 416
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