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Study of defects in GaN films by cross-sectional cathodoluminescence

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Zaldivar, M.H. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1998) Study of defects in GaN films by cross-sectional cathodoluminescence. Journal of Applied Physics, 83 (5). pp. 2796-2799. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.366634


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Abstract

Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements.


Item Type:Article
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© 1998 American Institute of Physics.
This work was supported by DGICYT (Project PB-1256). M.H.Z. thans AECI and CoNaCyt for a research grant.

Subjects:Sciences > Physics > Materials
ID Code:26378
Deposited On:29 Jul 2014 11:04
Last Modified:09 Jun 2016 15:31

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