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Deep energy levels in CdTe and CdZnTe

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Castaldini, A. and Cavallini, A. and Fraboni, B and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1998) Deep energy levels in CdTe and CdZnTe. Journal of Applied Physics, 83 (4). pp. 2121-2126. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.366946


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Abstract

The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed.


Item Type:Article
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(C) 1998 American Institute of Physics.

Uncontrolled Keywords:Current Transient Spectroscopy, Resistivity Bulk Material, Cadmium Telluride, Defects, Crystals, Cathodoluminescence, Cd1-Xznxte, Cl, Semiconductors, Detectors
Subjects:Sciences > Physics > Materials
ID Code:26387
Deposited On:29 Jul 2014 11:21
Last Modified:29 Jul 2014 11:21

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