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Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation

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Cavallini, A. and Dupasquier, A. and Ferro, G. and Piqueras de Noriega, Javier and Valli, M. (1997) Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation. In Positron Annihilation: ICPA-11. Materials Science Forum (255-2). Trans Tech Publications Ltd, pp. 614-616. ISBN 0-87849-779-X

Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.255-257.614


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Abstract

The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed.


Item Type:Book Section
Additional Information:

© Trans Tech Publications Ltd.
International Conference on Positron Annihilation (ICPA-11) (11. 1997. Kansas City, Missouri, USA).

Uncontrolled Keywords:As-Grown Gaas, Doped Gaas, Spectroscopy
Subjects:Sciences > Physics > Materials
ID Code:26760
Deposited On:30 Sep 2014 17:43
Last Modified:30 Sep 2014 17:43

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