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A Novel Photoconductive PVK/SiO_2 Interpenetrated Network Prepared by the Sol−Gel Process

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2003-01-09
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Amer Chemical Soc
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In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO_2 IPN) shows a photosensitivity of 10^-11 cm/(Ω W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol−gel materials.
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© 2003 American Chemical Society. The authors are grateful to the CICYT for the research grant MAT 2001-5073-E. Gonzalo Ramos is also grateful to INTA for a Rafael Calvo Rodés fellowship.
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