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Defect structure of SiNx : H films and its evolution with annealing temperature

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Mártil de la Plaza, Ignacio y Prado Millán, Álvaro del (2000) Defect structure of SiNx : H films and its evolution with annealing temperature. Journal of Applied Physics, 88 (4). pp. 2149-2151. ISSN 0021-8979

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URL Oficial: http://dx.doi.org/10.1063/1.1305548


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Resumen

The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is above the percolation threshold of the Si-Si bonds in the nitride lattice. The nature of this process is discussed and attributed to a thermally activated charge transfer between metastable defects. No such relaxation occurs in the films with a composition below the percolation threshold, possibly due to a positive correlation energy and a structural lack of flexibility. For higher annealing temperatures, an increase of the defect density is observed and associated with the thermal release of hydrogen. (C) 2000 American Institute of Physics. [S0021-8979(00)00516-8].


Tipo de documento:Artículo
Información Adicional:

© American Institute of Physics. This work was financed by the Spanish Ministry of Science (Grant No. TIC98/0740) and given technical assistance by the "Implantación Iónica" research support center of the University of Madrid.

Palabras clave:Electron-Cyclotron-Resonance, Deposited Silicon-Nitride, Amorphous-Silicon, Oxygen-Content.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:26784
Depositado:24 Sep 2014 07:08
Última Modificación:10 Dic 2018 14:58

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