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Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique



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Mártil de la Plaza, Ignacio y González Díaz, Germán (2000) Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique. Semiconductor Science and Technology, 15 (8). pp. 823-828. ISSN 0268-1242

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URL Oficial: http://dx.doi.org/10.1088/0268-1242/15/8/307

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The influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C-V data show that the SiNx:H/p-In0.53Ga0.47As interface is more defective than the SiNx,:H/n-In0.53Ga0.47As one. In both n- and p-type MIS structures, the interface trap density (D-it), the electrical breakdown field (E-B) and the resistivity (rho) are highly dependent on the insulator composition. On the other hand, rapid thermal annealing treatments at temperatures up to 600 degrees C induce a gradual improvement of both interface and SINx:H bulk quality on n-type MIS devices, whereas a continuous degradation of the SiNx:H/p-In0.53Ga0.47As interface properties is observed. Zinc out-diffusion from p-In0.53Ga0.47As towards the insulator-semiconductor interface could explain the poorest electrical characteristics of the MIS structures based on a p-type semiconductor.

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© IOP Publishing Ltd. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish Government under Grant No TIC 98/0740.

Palabras clave:Chemical-Vapor-Deposition, Insulator-Semiconductor Structures, Gate Quality, Films, Transistors, Dielectrics, Diffusion, Stability, Remote, PECVD.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:26786
Depositado:24 Sep 2014 07:18
Última Modificación:10 Dic 2018 14:58

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