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Compensation and deep levels in II-VI compounds

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Castaldini, A. and Cavallini, A: and Fraboni, B. and Polenta, L. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1996) Compensation and deep levels in II-VI compounds. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 302-305. ISSN 0921-5107

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Official URL: http://dx.doi.org/10.1016/S0921-5107(96)01726-6


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Abstract

We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim Lye have utilized both junction spectroscopy techniques and cathodoluminescence (CL) spectroscopy. As junction spectroscopy methods we have utilized deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy (PICTS) and photo-DLTS (P-DLTS). By exploiting the peculiarities of these experimental methods, joined by CL characterization, we were able to gain further insight into the revealed traps properties, such as the trap nature (donor/acceptor). We have focused our attention on the deep levels that have been suggested to be involved in the compensation process, such as centre A.


Item Type:Article
Additional Information:

© 1996 - Elsevier Science S.A.
International Workshop on Beam Injection Assessment of Defects in Semiconductors (4. 1996. El Escorial, España).
This research has been partially supported by the Cooperation Programme “Azione Integrata” between Italy and Spain and by DGICYT (Project PB 93-1256). The authors are indebted to the Japan Energy Corporation for the undoped and Cl doped samples.

Uncontrolled Keywords:Cadmium Telluride, Cdte, Defects, Crystals, Spectroscopy, Detectors
Subjects:Sciences > Physics > Materials
ID Code:26792
Deposited On:30 Sep 2014 18:14
Last Modified:09 Jun 2016 16:30

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