Publication: Compensation and deep levels in II-VI compounds
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Publication Date
1996-12-15
Authors
Castaldini, A.
Cavallini, A:
Fraboni, B.
Polenta, L.
Piqueras de Noriega, Javier
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Elsevier Science Sa
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Abstract
We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim Lye have utilized both junction spectroscopy techniques and cathodoluminescence (CL) spectroscopy. As junction spectroscopy methods we have utilized deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy (PICTS) and photo-DLTS (P-DLTS). By exploiting the peculiarities of these experimental methods, joined by CL characterization, we were able to gain further insight into the revealed traps properties, such as the trap nature (donor/acceptor). We have focused our attention on the deep levels that have been suggested to be involved in the compensation process, such as centre A.
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© 1996 - Elsevier Science S.A.
International Workshop on Beam Injection Assessment of Defects in Semiconductors (4. 1996. El Escorial, España).
This research has been partially supported by the Cooperation Programme “Azione Integrata” between Italy and Spain and by DGICYT (Project PB 93-1256). The authors are indebted to the Japan Energy Corporation for the undoped and Cl doped samples.
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[l] M. Hage-Ali and P. Siffert, Nucl. Instr. and Metods, A322 (1992) 313.
[2] P. Höschl, P. Moravec, J. Franc, E. Belas and R. Grill, Nucl. Instr. and Methods, A322 (1992) 311.
[3] J.W. Allen, Semicod. Sci. Techrzol., 10 (1995) 1049.
[4] W. Stadler, D.M. Hoffman, H.C. Alt, T. Muschik, B.K. Meyer, E. Weigel, G. Miiller-Vogt, M. Salk, E. Rupp and K.W. Benz, Phys. Rev. B, 51 (1995) 10619.
[5] D.M. Hofmann, D. Omling, H.G. Grimmeiss, B.K. Meyer K W Benz and D Sinerius Phys Rev. B, 45 (1992) 6247.
[6] C. Barnett Davies, D.D. Allred, A. Reyes-Mena, J. González Hernández , O Gonzales B. C. Gess and W. P. Allred Phys Rev B, 47 (1993) 13363.
[7] U. Pal, P. Fernandez, J. Piqueras, N.V. Suchiuski and E 251Dieguez, J. Appl. Phys., 78 (1995) 1992.
[8] M. Samimi, B. Biglari, M. Hage-Ali, J.M. Koebel and P. Siffert, Php. Stat. Sol. {a), 100 (1987) 251.
[9] M. Fiederle, D. Ebling, C. Eiche, D.M. Hofmann, M. Salk, W. Stadler, K.W. Benz and B.K. Meyer, J. C,ysi. Growtil, 138 (1994) 529.
[l0] P. Blood and J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London, 1992.
[11] P.M. Mooney, J. Appi. Phys., 54 (1983) 208.
[12] U. Pal, P. Fernandez and J. Piqueras, Mater. Lett., 23 (1995) 227.
[13] E. Lopez-Cruz, J. Gonzalez-Hernandez, D.D. Allred and W.P. Allred, J. Vat. Ski. Technol., A8 (1990) 1934.