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Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy

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Mártil de la Plaza, Ignacio y González Díaz, Germán y Prado Millán, Álvaro del (2000) Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy. Surface and interface analysis, 30 (1). pp. 534-537. ISSN 0142-2421

URL Oficial: http://dx.doi.org/10.1002/1096-9918(200008)30:1<534::AID-SIA832>3.0.CO;2-C


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http://onlinelibrary.wiley.comEditorial


Resumen

The composition of amorphous SiNx:H films grown by the electron cyclotron resonance (ECR) plasma method was studied by heavy-ion elastic recoil detection analysis (ERDA) with Xe-129 ion beams of 1.1 and 1.8 MeV amu(-1) and time-of-light (ToF) mass separation. This technique allows simultaneous determination of the absolute atomic concentrations and depth profiles of all involved elements, including hydrogen, Radiation damage at extended ion beam exposure was found to decrease the N/Si ratio and the hydrogen concentration, By measuring the dose dependence, this effect was quantified in order to support correction to zero dose conditions. Monitoring the damage effects by infrared (IR) spectroscopy revealed an increase of the SI-H bond density at the expense of N-H bands. The results suggest that the damage process Is initiated by breaking of N-H bonds and that recapturing of hydrogen by Si appears as an effective competitive process to hydrogen release, Combining the ERDA and IR data, the oscillator strength ratio of the N-H and Si-H stretching bands is found to be 1.4 +/- 0.2, Copyright (C) 2000 John Wiley & Sons, Ltd.


Tipo de documento:Artículo
Información Adicional:

European Conference on Applications of Surface and Interface Analysis (8. 1999. Sevilla, España). © John Wiley & Sons, Ltd.

Palabras clave:Electron-Cyclotron-Resonance, Silicon-Nitride, Temperature, Deposition.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:26796
Depositado:29 Sep 2014 10:08
Última Modificación:10 Dic 2018 14:58

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