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High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices

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Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices. Journal of Applied Physics, 87 (7). pp. 3478-3482. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.372369


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Abstract

Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 4000 cm(2)/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n(+)p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. (C) 2000 American Institute of Physics. [S0021-8979(00)01807-7].


Item Type:Article
Additional Information:

© American Institute of Physics. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for assistance with ion implantation. This work was partially supported by the Spanish CICYT under Grant No. TIC 98/0740.

Uncontrolled Keywords:InGaAs, InP, Luminescence, Photodiode.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26798
Deposited On:25 Sep 2014 08:07
Last Modified:10 Dec 2018 14:58

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