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N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance

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Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance. Microelectronics reliability, 40 (4-5). pp. 837-840. ISSN 0026-2714

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Official URL: http://dx.doi.org/10.1016/S0026-2714(99)00322-4


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Abstract

Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers are deposited at 200 degrees C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N-2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown held values of the SiNx:H. (C) 2000 Elsevier Science Ltd. All rights reserved.


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Additional Information:

Workshop on Dielectrics in Microelectronics (10. 1999. Barcelona). © Elsevier Science Ltd. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish government under Grant no. TIC 98/0740.

Uncontrolled Keywords:Electrical-Properties, Surface, Nitridation, Devices.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:26801
Deposited On:25 Sep 2014 08:01
Last Modified:10 Dec 2018 14:58

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