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Defect energy levels in Cd-based compounds

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Castaldini, A. and Cavallini, A. and Fraboni, B and Piqueras de Noriega, Javier and Polenta, L. (1996) Defect energy levels in Cd-based compounds. In Defect Recognition And Image Processing In Semiconductors 1995. Conference Series- Institute of Physics (149). IOP Publishing LTD, Bristol, pp. 115-120. ISBN 0-7503-0372-7



Abstract

The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd0.8Zn0.2Te. The electrical activity of the defects has bean studied by DLTS, PICTS and P-DLTS while their optical properties have been characterized by cathodoluminescence, CL. Various deep levels have been found and by critically comparing the results obtained with the different techniques in different samples, we were able to achieve a better understanding of the nature of the defects.


Item Type:Book Section
Additional Information:

(c) 1997 Institute for Scientific Information.
Defect Recognition and Image Processing in Semiconductors 1995 Conference (DRIP VI). (1995. Boulder, USA).

Uncontrolled Keywords:Transient Spectroscopy, Cadmium Telluride, Deep Levels, Crystals
Subjects:Sciences > Physics > Materials
ID Code:26811
Deposited On:30 Sep 2014 18:28
Last Modified:30 Sep 2014 18:30

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