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Elimination of Te precipitates from CdTe wafers



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Sochinskii, N. V. y Dieguez, E. y Pal, U. y Piqueras de Noriega, Javier y Fernández Sánchez, Paloma y Agullorueda, F. (1995) Elimination of Te precipitates from CdTe wafers. Semiconductor Science and Technology, 10 (6). pp. 870-875. ISSN 0268-1242

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URL Oficial: http://dx.doi.org/10.1088/0268-1242/10/6/020

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Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has been studied by Raman scattering (RS) and cathodoluminescence (CL) techniques. The as and ct spectra of the as-grown and annealed wafers are discussed in connection with the doping and native structural defects and residual impurities. The kinetics of elimination of Te precipitates was found to be similar in the undoped and doped wafers. The rate of elimination is the highest for the annealing in Ga melt. Precipitate-free wafers have been obtained by annealing in Ga melt at 600 degrees C for 24 h. Simultaneously with the elimination of Te precipitates, Ga melt causes the in-diffusion of Ga atoms into the wafers. This implies that annealing in Ga melt could be a superior procedure for the elimination of Te precipitates from CdTe wafers in which Ga doping is not important or is desired.

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© 1995 iOP Publishing Ltd.
Two of us (NVS and UP) thank research fellowships from the Spanish Ministeno de Educacion y Ciencia. This work has been supported by DGICYT (project PB93- 1256).

Palabras clave:Crystals, Growth
Materias:Ciencias > Física > Física de materiales
Código ID:26865
Depositado:02 Oct 2014 18:24
Última Modificación:09 Jun 2016 16:40

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