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Junction spectroscopy of highly doped GaAs: detection of the EL2 trap

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Castaldini, A. and Cavallini, A. and Fraboni, B. and Piqueras de Noriega, Javier (1994) Junction spectroscopy of highly doped GaAs: detection of the EL2 trap. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 28 (1-mar). pp. 397-399. ISSN 0921-5107

Official URL: http://dx.doi.org/10.1016/0921-5107(94)90091-4


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Abstract

The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A>1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te with N_D-N_A up to about 7x10^17 cm^(-3). By choosing appropriate spectroscopy methods, we have detected the EL2 peak, even in the most doped sample. This shows that such a defect is present in the material, but its detection is controlled by the quasi-Fermi level position in the gap, which also affects the Schottky diode operating conditions.


Item Type:Article
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© 1994 Published by Elsevier B.V.
International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94) (2. 1994. Parma, Italia)

Uncontrolled Keywords:Defect, Bulk
Subjects:Sciences > Physics > Materials
ID Code:26890
Deposited On:02 Oct 2014 18:34
Last Modified:02 Oct 2014 18:35

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