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Scanning electron acoustic microscopy of electronic materials

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Piqueras de Noriega, Javier (1994) Scanning electron acoustic microscopy of electronic materials. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 24 (1). pp. 209-212. ISSN 0921-5107

Official URL: http://dx.doi.org/10.1016/0921-5107(94)90329-8


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Abstract

Some scanning electron acoustic microscopy (SEAM) applications to the characterization of electronic materials are discussed. The specific problem of the observation of dislocations and dislocation-related features in GaAs is treated as an example of SEAM capability and limitations in the characterization of III-V compounds. However, SEAM is applied to study high T(c) superconductors. It is shown that evolution of the SEAM signal with temperature can provide information about structural changes above the critical temperature.


Item Type:Article
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© 1994 Published by Elsevier B.V.
International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop (3. 1993. Bolonia, Italia)

Uncontrolled Keywords:Signal, Gaas
Subjects:Sciences > Physics > Materials
ID Code:26991
Deposited On:07 Oct 2014 09:50
Last Modified:07 Oct 2014 09:50

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