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Local distribution of deep centers in GaP studied by infrared cathodoluminescence

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Domínguez-Adame Acosta, Francisco and Piqueras de Noriega, Javier and Fernández Sánchez, Paloma (1991) Local distribution of deep centers in GaP studied by infrared cathodoluminescence. Applied physics Letters, 58 (3). pp. 257-259. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.104681


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Abstract

Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.


Item Type:Article
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© 1991 American Institute of Physics.
This work was supported by the Comisibn Interministerial de Ciencia y Tecnologia (Project PB86-0151) . The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples and Dr. P. Moser (C.E.N.G.Grenoble) for the electron irradiation.

Uncontrolled Keywords:Vacancy Defects
Subjects:Sciences > Physics > Materials
ID Code:27035
Deposited On:10 Oct 2014 07:56
Last Modified:09 Feb 2018 14:54

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