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Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence

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Domínguez-Adame Acosta, Francisco and Piqueras de Noriega, Javier (1991) Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence. Journal of Applied Physics, 69 (1). pp. 502-504. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.347692


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Abstract

Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.


Item Type:Article
Additional Information:

© 1991 American Institute of Physics.
This work was partially supported by the Comisión Interministerial de Ciencia y Tecnología (Project PB86-0151) and by DGICYT-DAAD.

Uncontrolled Keywords:Photo-Luminescence, Dislocations
Subjects:Sciences > Physics > Materials
ID Code:27038
Deposited On:10 Oct 2014 07:58
Last Modified:13 Nov 2014 08:50

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