Publication: Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
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1991-01-01
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Piqueras de Noriega, Javier
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American Institute of Physics
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Abstract
Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.
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© 1991 American Institute of Physics.
This work was partially supported by the Comisión Interministerial de Ciencia y TecnologÃa (Project PB86-0151) and by DGICYT-DAAD.
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