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Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures

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Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Castán, E. and Dueñas, S. and Fernández, M. (1998) Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures. Journal of Applied Physics, 83 (1). pp. 332-338. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.366713


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Abstract

We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the ratio N/Si<1.33) or to nitrogen (for films where the ratio N/Si is higher than 1.33). In the films with the N/Si ratio of 1.38, the hydrogen content is 6 at. %. For compositions which are comprised of between N/Si=1.1 and 1.4, hydrogen concentration remains below 10 at. %. The films with N/Si=1.38 exhibited the better values of the electrical properties (resistivity, 6x10(13) Omega cm; and electric breakdown field, 3 MV/cm). We have used these films to make metal-insulator-semiconductor (MIS) devices on n-type silicon wafers. C-V measurements accomplished on the structures indicate that the interface trap density is kept in the range (3 - 5) x 10(11) cm(-2) eV(-1) for films with the N/Si ratio below 1.38. For films where the N/Si ratio is higher than 1.3, the trap density suddenly increases, following the same trend of the concentration of N-H bonds in the SiNx:H films. The results are explained on the basis of the model recently reported by Lucovsky [J. Vac. Sci. Technol. B 14, 2832 (1996)] for the electrical behavior of (oxide-nitride-oxide)/Si structures. The model is additionally supported by deep level transient spectroscopy measurements, that show the presence of silicon dangling bonds at the insulator/semiconductor interface (the so-called P-bN0 center), The concentration of these centers follows the same trend with the film composition of the interface trap density and, as a consequence, with the concentration of N-H bonds. This result further supports the N-H bonds located at the insulator/semiconductor interface which act as a precursor site to the defect generation of the type . Si=Si-3, i.e., the P-bN0 centers. A close relation between interface trap density, P-bN0 centers and N-H bond density is established.


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© American Institute of Physics. The authors would like to thank E. Iborra for the facilities of the infrared characterization of the films. This work was partially supported by the Spanish Government (CICYT), under Grant TIC 93/0175.

Uncontrolled Keywords:Chemical-Vapor-Deposition, Silicon-Nitride Films, Level Transient Spectroscopy, Si-SiO2 Interfaces, Room-Temperature, Hydrogen Content, Plasma, Oxide, Dielectrics, Traps.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27065
Deposited On:13 Oct 2014 15:02
Last Modified:10 Dec 2018 14:58

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