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Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

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Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Castán, E. and Dueñas, S. and Fernández, M. (1998) Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method. Journal of Applied Physics, 83 (1). pp. 600-603. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.366647


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http://scitation.aip.org/Publisher


Abstract

We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacitance-voltage and deep level transient spectroscopy measurements. We deduce an inverse correlation between the insulator composition-the N/Si ratio-and the density of interface traps: those films with the maximum N/Si ratio (1.49) produce devices with the minimum trap density-2 x 10(12) cm(-2) eV(-1) at 0.42 eV. above the midgap. We explain the influence of film composition on the interface trap density in terms of a substitution of phosphorous vacancies at the InP surface, V-p, by N atoms coming from the insulator, N-Vp. The values obtained in our research for the interface trap distribution were similar to other published results for devices that use chemical and/or physical passivation processes of the InP surface prior to the deposition of the insulator.


Item Type:Article
Additional Information:

© American Institute of Physics. This research was partially supported by the Spanish Government (CICYT), under Grant no. TIC 93/0175.

Uncontrolled Keywords:Chemical-Vapor-Deposition, Interface Control Layer, Passivation, Temperature, Sulfide, GaAs.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27066
Deposited On:13 Oct 2014 15:05
Last Modified:10 Dec 2018 14:58

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