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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

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Mártil de la Plaza, Ignacio y González Díaz, Germán y Barbolla, J. y Castán, E. y Dueñas, S. y Peláez, R. y Pinacho, R. y Quintanilla, L. (1997) Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures. Applied physics Letters, 71 (6). pp. 826-828. ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.119658


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Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.


Tipo de documento:Artículo
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© American Institute of Physics.

Palabras clave:Silicon-Nitride, Spectroscopy.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:27068
Depositado:14 Oct 2014 10:32
Última Modificación:14 Oct 2014 10:32

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