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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Barbolla, J. and Castán, E. and Dueñas, S. and Peláez, R. and Pinacho, R. and Quintanilla, L. (1997) Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures. Applied physics Letters, 71 (6). pp. 826-828. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.119658


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Abstract

Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.


Item Type:Article
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© American Institute of Physics.

Uncontrolled Keywords:Silicon-Nitride, Spectroscopy.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27068
Deposited On:14 Oct 2014 10:32
Last Modified:10 Dec 2018 14:58

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