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Role of oxygen on the dangling bond configuration of low oxygen content SiNx :H films deposited at room temperature

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Mártil de la Plaza, Ignacio and Bravo, D. and Fernández, M. and García, S. and López, F.J. (1995) Role of oxygen on the dangling bond configuration of low oxygen content SiNx :H films deposited at room temperature. Applied physics letters, 67 (22). pp. 3263-3265. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.114892


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Abstract

SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For the N-rich films they are of the form . Si=(N-3), whereas for the films with similar [N]/[Si] ratio but containing oxygen, the predominant defect is proposed to be Si=(Si2O), despite of the high N content and the low O content of these films. The spin density of the films has been related to the bonds that hydrogen establishes (either Si-H or N-H), with the maximum value corresponding to the minimum hydrogen content. Both maximum and minimum values, respectively, are obtained at the silicon percolation limit of the Si-Si bonds into the SiNx:H network, x similar to 1.10.


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Additional Information:

© American Institute of Physics. The authors wish to thank Dr. E. Iborra of the E.T.S.I.T. of the Universidad Politécnica of Madrid, Spain, the facilities offered for IR measurements. This work has been partly supported by the Spanish government through Grant No. TIC93-175E.

Uncontrolled Keywords:Electron-Spin-Resonance, Silicon-Nitride, Defects, PECVD.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:27112
Deposited On:16 Oct 2014 09:12
Last Modified:10 Dec 2018 14:58

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